The difference between amorphous and low-temperature polysilicon

What is a low-temperature polysilicon:

Temperature polysilicon LTPS is LowTemperaturePloySilicon abbreviation generally low temperature polysilicon manufacturing process temperature should be below 600 degrees Celsius, in particular different from the a-Si for LTPS fabrication manufacturing process "laser annealing" (laseranneal) requires even more so. Compared with a-Si, OLED Module LTPS the electrons move faster than a-Si 100 times faster, this feature can be explained by two problems: First, each LTPSPANEL than a-SiPANEL fast response; secondly, LTPSPANEL exterior dimensions than a-SiPANEL small. The following are LTPS compared with a-Si held significant advantages:
1, the driver IC of the peripheral circuits into the panel substrate viability of the stronger;
2, the reaction is faster, the appearance of smaller, joins, and fewer components;
3, panel system design is more simple;
4, panel greater stability;
5, higher resolution,
Laser annealing:
p-Si and a-Si LTPSTFT a significant difference in the manufacturing process is the application of laser irradiation. LTPS during the manufacturing process on the a-Si layer so that the laser irradiation a-Si crystals. Since the packaging process on the substrate to complete the conversion of polysilicon, LTPS use of laser energy to the amorphous silicon into polycrystalline silicon, this process is called laser irradiation.

Electron mobility:
a-SiTFT in electron mobility than 1cm2/V.sec, while the driver IC requires a higher operating speed of the circuit to drive. This is why a-SiTFT difficult to integrate the drive IC to the substrate. In contrast, p-Si moving speed of electrons can reach 100cm2/V.sec, 16x4 lcd but also easier to integrate the driver IC to the substrate. The result is, firstly since the drive IC, PCB and coupling integrated into the substrate to reduce the production costs, followed by the product lighter weight, thinner.